RS100N190T is a low-voltage N-channel field effect transistor.It possesses product characteristics such as low on-resistance, low loss, high avalanche resistance, and high efficiency.It is suitable for applications such as motor drives, 5G base stations, energy storage, high-frequency switching, synchronous rectification, and other fields.
BVdss (V)=100，ID(A)=190
Vth (V)Min=2，Typ=3，Max=4
Vgs=±20
Rdson_10V(mΩ)，Typ=3.2，Max=3.8
SGT trench shielding gate design and process manufacturing technology
Lower on-resistance, smaller gate charge Qg, and lower switching losses
Better EMI advantages and anti-avalanche EAS capability
| Device | Document Format | size | Download specification document |
|---|---|---|---|
| RS100N190T | 1100 | RS100N190T |
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