The RSM120018Z is an N-channel enhancement mode power MOS field effect transistor which is produced using Reasunos proprietary Silicon Carbide MOSFET technology optimized to allow for both the high energy pulse in the avalanche and high temperature operation,high frequency.Can be improved efficiency, space, and weight savings, part count reduction, enhanced system reliability. This devices are widely used industrial applications including, servers, telecom, motor drives, and more.
VDS =1200V,ID =105A
RDS(ON) <26mΩ@ VGS = 20V
High temperature operation
High frequency.
High Pulse Avalanche Engergy
Low Drain-to-Source On-Resistanc
| Device | Type | size | Download specification document |
|---|---|---|---|
| RSM120018Z | 1100 | RSM120018Z |
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