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RSF60R026W
High Voltage N-Channel Multilayer Epitaxial Super Junction MOS

RSF60R026W is an N-channel multilayer epitaxial super junction field effect transistor manufactured by Reasunos using advanced superjunction technology. By optimizing the chip structure, the product has extremely low conduction internal resistance and high gate charge, which can greatly reduce the product EMI and switching losses. Widely used in high-power switching power supplies, charging piles, mining machines and other fields.


Main Features
    • VDS = 600V,ID =100A

    • RDS(ON) <26mΩ @ VGS = 10V

    • Low Drain-to-Source On-Resistance

    • High UIS and UIS 100% Test


Technical Documentation
Device Type size Thumbnail Download specification document
RSF60R026W PDF 2000 RSF60R026W
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