RS12N65F is an N-channel field-effect transistor manufactured by Reasunos using advanced planar MOS technology. Adopting a new type of lateral doping technology and proprietary power MOS structure, it has excellent high-temperature characteristics, low high-temperature leakage, and small high-temperature voltage drop.
ID(A)=12，VDSS(V)=650
RDS(on)Typ(Ω)=0.62，RDS(on) Max(Ω)=0.72
High Pulse Avalanche Engergy
Low Drain-to-Source On-Resistance
High UIS and UIS 100% Test
Email：director@reasunos.com
Skype：8618825898464
