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RSU7N65F
High Voltage N-Channel Multilayer Epitaxial Super Junction Mosfet

RSU7N65F is an N-channel enhancement mode high voltage power MOSFETs produced using Reasunos COOL MOS technology. It achieves low Drain-to-Source On-Resistance,has low conduction loss and switching losses. can be design to their power converters with high efficiency, high power density, and superior thermal behavior. It’s universal applicable, it is suitable fo LED driver, PFC circuit, switching power supply, UPS , new energy power equipment, etc.


Main Features
    • ID(A) =7,VDSS(V)=650

    • RDS(on) Typ(mΩ)=560,RDS(on) Max(mΩ)=650

    • It features low on-resistance and excellent EMI characteristics

Technical Documentation
Device Document Format size Download specification document
RSU7N65F PDF 1100 RSU7N65F
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